EMD59T2R

EMD59T2R

$0.32
  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:aa1f79716f23 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMD59T2R

Overview

The EMD59T2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring an NPN and PNP configuration within a SOT-563-6 surface-mount package. It integrates bias resistors with a typical input resistance of 10 kOhms and a resistor ratio of 4.7. The device supports a maximum operating frequency of 250 MHz and handles continuous collector currents of ±100 mA. Key electrical limits include a collector-emitter voltage (VCEO) of ±150 mV, power dissipation of 150 mW, and an emitter-base voltage (VEBO) of 1.7 V. Minimum DC current gain (hfe) is specified at 80 under defined test conditions.

Feature Summary

  • Integrates NPN and PNP transistors with built-in bias resistors for simplified circuit design
  • Optimized for high-frequency operation up to 250 MHz
  • Compact SOT-563-6 packaging suitable for space-constrained applications

Applications

  • 3-phase brushless fan motor driver circuits
  • General-purpose switching applications requiring complementary transistor pairs
  • Interface circuits in consumer electronics

Procurement Notes

Verify the specific suffix T2R indicates reel packaging when ordering. Confirm RoHS compliance status through official documentation prior to integration. Ensure the supplier provides valid traceability data matching the ROHM Semiconductor manufacturer identification. Cross-reference the Mouser part number 755-EMD59T2R for accurate sourcing channels.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated base resistors is required. The 10 kOhm input resistance suits standard logic interface levels. Verify that the ±150 mV VCEO rating meets the specific circuit voltage requirements, as this value appears unusually low for general-purpose devices and may indicate a specific application constraint or datasheet anomaly requiring validation.

Part Context

The EMD59T2R belongs to ROHM's digital transistor family, specifically designed for applications needing compact dual-transistor solutions. It shares the SOT-563-6 footprint with other variants like the EMH59T2R, though it differs in polarity by combining both NPN and PNP types. This configuration reduces component count compared to using discrete transistors.

Replacement Considerations

The EMH59T2R serves as a related dual digital transistor but utilizes an NPN+NPN configuration rather than the NPN+PNP setup found in the EMD59T2R. Designers must verify polarity compatibility before substitution. Other SOT-563-6 digital transistors from ROHM may require schematic adjustments due to differing internal resistor values.

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