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The EMD5DXV6T1 is a dual bipolar digital transistor (BRT) manufactured by onsemi, designed to replace a single device and its external resistor bias network. It integrates one NPN and one PNP transistor within a SOT-563 package. The component features an integrated base resistor for simplified circuit design. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device operates within a temperature range of -55°C to +150°C.
Verify RoHS compliance status and lead times through authorized distributors. Confirm availability as the part may be subject to discontinuation notices. Ensure the supplier provides valid traceability documentation for quality assurance purposes prior to procurement.
Select this component when a compact solution requires both NPN and PNP switching capabilities with integrated biasing. Consider the SOT-563 footprint constraints and thermal dissipation requirements relative to the 100 mA current rating. Verify that the internal resistor values meet the specific logic drive requirements of the application.
This component belongs to the EMX1 series of dual digital transistors from onsemi. These devices are engineered to reduce board space and assembly costs by combining two transistors and their associated bias resistors into a single package. The series supports various configurations for general-purpose electronic applications.
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout compatibility and electrical ratings before replacing with other BRT packages.