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The EMD5DXV6T1G is a dual complementary digital transistor manufactured by onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-553-5 surface-mount package. This Bias Resistor Transistor (BRT) combines transistors with monolithic bias networks consisting of series base resistors and base-emitter resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 357 mW. The device features a minimum DC current gain (hFE) of 80 and operates across a temperature range from -55°C to +150°C.
Verify the specific suffix T1G against official datasheets to confirm packaging and compliance details. Confirm availability status as distribution channels may list obsolete or end-of-life inventory. Ensure the supplier provides valid traceability documentation for quality assurance purposes before finalizing procurement orders.
Select this component when space-constrained designs require both NPN and PNP switching capabilities. Verify that the 50V voltage rating and 100mA current limits exceed the application's peak requirements. Consider the integrated bias network values if they match the target drive conditions without needing external components.
This part belongs to the EMD5DXV6 series of dual complementary digital transistors. It shares functional similarities with other BRT families but offers specific pinout and electrical characteristics defined by the SOT-553-5 package. The series is designed to replace multiple discrete components in standard switching topologies.
Check for direct replacements such as EMD4DXV6T1G or EMD5DXV6T5G, ensuring pin compatibility and matching electrical ratings. Verify that any substitute maintains the same complementary configuration and bias resistor ratios to avoid redesigning the surrounding circuitry.