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The EMD5DXV6T5G is a dual complementary digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor with built-in bias resistors in a single SOT-553-5 surface-mount package. It operates with a maximum collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 357 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify component authenticity through authorized distribution channels due to the presence of counterfeit risks in the semiconductor market. Confirm RoHS compliance status via official datasheets before integration into regulated products. Validate that the specific suffix corresponds to the required packaging format for automated assembly processes.
Select this component when a matched NPN/PNP pair is required within a confined footprint. Ensure the 50 V voltage rating exceeds the maximum circuit supply voltage. Verify that the 47 kOhm input resistance aligns with the driving source capabilities to maintain proper logic thresholds during operation.
This part belongs to the EMD5DXV6 series of dual digital transistors manufactured by onsemi. It shares the same internal configuration as the EMD4DXV6T5G but differs in the specific resistor values integrated within the package. Both components serve similar functions in complementary switching applications while offering distinct electrical characteristics.
The EMD4DXV6T5G serves as a functional substitute within the same series, offering identical NPN/PNP configuration in the SOT-553-5 package. Engineers must verify that the differing input resistance values do not impact the target circuit's timing or drive requirements.