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The EMD62T2R is a dual complex digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single compact component. The device features a typical input resistance of 47 kOhms for both channels. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. Power dissipation is rated at 150mW, with a minimum DC current gain (hFE) of 80 at specified test conditions.
Verify the specific ordering suffix against the manufacturer's latest datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate RoHS compliance and authenticity before integration into production designs.
Select this component when a compact solution for complementary switching is required. The 47kOhm input resistance offers a standard balance between drive current and power consumption. Verify that the 50V breakdown voltage and 100mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the EMD series of complex digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, offering a space-saving alternative for digital logic interfacing and switching tasks in portable and industrial equipment.
Direct functional equivalents may include other dual NPN/PNP digital transistors in SOT-563 packages with similar 47kOhm input resistances and 50V ratings. Verify pin-to-pin compatibility and hFE characteristics before substitution.