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The EMD6FHAT2R is a dual digital transistor array from Rohm Semiconductor, integrating one NPN and one PNP bipolar junction transistor within a compact SOT-563 (EMT6) surface-mount package. This component features built-in biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V for the NPN element and -50V for the PNP element. The continuous collector current is rated at 0.1A for both polarities. It incorporates a typical input resistance of 4.7kΩ and maintains a power dissipation capacity of 0.15W.
Verify the obsolescence status before procurement, as this component may be marked as not recommended for new designs. Confirm availability through authorized distributors, as stock levels fluctuate. Ensure compliance with RoHS standards and check for automotive qualification requirements if applicable to the target application environment.
Select this component when space-constrained designs require complementary switching or amplification functions. The integrated 4.7kΩ input resistors reduce external component count compared to discrete BJT solutions. Consider the 0.15W power dissipation limit and thermal management requirements for dense PCB layouts.
This part belongs to Rohm's EMD6 series of complex digital transistors. These devices are engineered to replace multiple discrete components, offering a compact alternative for signal processing tasks. The SOT-563 package provides a small footprint suitable for modern portable electronics and high-density assembly processes.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with equivalent models such as DTA143T or DTC143T only if datasheet parameters match exactly.