EMD6T2R

EMD6T2R

$0.45
  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-

SKU:ef94e11546f7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMD6T2R

Overview

The EMD6T2R is a dual complex digital transistor manufactured by ROHM Semiconductor, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563-6 surface-mount package. It features built-in biasing resistors with typical values of 4.7 kOhms for both input resistors (R1) and emitter-base resistors (R2), resulting in a resistor ratio of 1. The device supports a maximum continuous collector current of ±100 mA and a collector-emitter voltage of ±50 V. Key electrical parameters include a minimum DC current gain (hFE) of 80 at specified test conditions, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. The component operates up to a maximum temperature of +150°C.

Feature Summary

  • Integrates independent NPN and PNP transistor elements to eliminate interference while reducing mounting area and cost.

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillators
  • Starters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Ensure that the selected variant meets the required RoHS compliance standards for the target assembly process. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require dual pre-biased transistors with matched resistor ratios. The SOT-563 package facilitates automated surface-mount assembly. Verify that the ±50V breakdown voltage and 100mA current limits align with the circuit's operational requirements and thermal management capabilities.

Part Context

This part belongs to the EMD series of general-purpose dual digital transistors from ROHM Semiconductor. These components are designed as replacements for discrete combinations such as DTA143T and DTC143T. The series emphasizes miniaturization and simplified circuit design by combining complementary transistor types with integrated biasing networks in a compact footprint.

Replacement Considerations

Publicly confirmed equivalent single-part references include DTA143T for the NPN element and DTC143T for the PNP element. Verify pin-to-pin compatibility and electrical characteristics against the original discrete design requirements before substitution.

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