EMD72T2R

EMD72T2R

$0.29
  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-

SKU:b70f08dedf3e Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMD72T2R

Overview

The EMD72T2R is a dual digital transistor from ROHM Semiconductor, featuring one NPN and one PNP bipolar junction transistor within a single SOT-563-6 package. It integrates bias resistors with typical values of 4.7 kOhms and a ratio of 10. Key electrical parameters include a maximum operating frequency of 250 MHz, collector continuous current of ±100 mA, and power dissipation of 150 mW. The device supports a collector-emitter voltage of ±150 mV and an emitter-base voltage of ±1.1 V. Minimum DC gain (hfe) is specified at 80 for both polarities under defined test conditions.

Feature Summary

  • Combines NPN and PNP transistors in a compact surface-mount package to reduce component count.
  • Integrates built-in bias resistors to simplify circuit design and improve switching speed.
  • Provides high-frequency performance suitable for signal processing applications.

Applications

  • General-purpose logic level shifting and interface circuits
  • Driver stages for small-signal switching applications
  • Digital buffer circuits in portable electronic devices

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity requirements directly with the manufacturer or authorized distributors. Confirm RoHS compliance status and ensure the sourcing channel provides valid traceability documentation for quality assurance purposes prior to final procurement decisions.

Selection Notes

Select this component when a mixed NPN/PNP configuration is required in a minimal footprint. Ensure the 4.7 kOhm input resistance aligns with the driving source impedance. Verify that the ±100 mA current rating and 150 mW power dissipation meet the thermal and load requirements of the target application environment.

Part Context

This part belongs to the EMD series of complex digital transistors manufactured by ROHM Semiconductor. These components are designed to replace discrete resistor-transistor networks, offering space savings and improved reliability in surface-mount designs compared to traditional through-hole or multi-component solutions.

Replacement Considerations

EMD62T2R: Similar NPN/PNP configuration but with different internal resistor values (47 kOhms). EMH52T2R: Dual NPN configuration only, not a direct functional substitute for mixed polarity needs.

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