EMD9FHAT2R

$0.27

Description：PNP+NPN DIGITAL TRANSISTOR (CORR
Series：-

SKU:25db569b2e35 Category: Bipolar Transistor Arrays, Pre-Biased Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：PNP+NPN DIGITAL TRANSISTOR (CORR
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：-
Resistor - Base (R1)：10kOhms
Resistor - Emitter Base (R2)：47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：-
Frequency - Transition：250MHz
Power - Max：150mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：EMT6

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EMD9FHAT2R

Overview

The EMD9FHAT2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It integrates one NPN and one PNP transistor within an EMT6 surface-mount package, equivalent to SOT-563 or SOT-666. The device features a maximum collector current of 100mA and a transition frequency of 250MHz. Internal base resistance is 10kΩ, while emitter-base resistance is 47kΩ. DC current gain is specified at a minimum of 68 under test conditions of 5mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 150mW, with a saturation voltage of 300mV at 250µA base current and 5mA collector current.

Feature Summary

Integrated dual configuration combining one NPN and one PNP pre-biased transistor in a single compact package
High-speed operation capability supported by a 250MHz transition frequency for signal processing applications
Automotive-grade reliability certified under AEC-Q101 standards for enhanced durability

Applications

Automotive electronic systems requiring functional safety support
High-frequency switching circuits utilizing the 250MHz transition speed
Digital logic interface buffering and level shifting

Procurement Notes

Verify component authenticity through authorized distribution channels prior to integration. Confirm that the specific revision matches design requirements, as this part carries a not recommended for new design status. Ensure supply chain stability due to potential manufacturing constraints associated with end-of-life management protocols.

Selection Notes

Evaluate thermal performance against the 150mW maximum power dissipation limit during circuit simulation. Verify that the 100mA collector current rating exceeds peak load demands. Consider the AEC-Q101 qualification if the application operates within automotive environments requiring strict reliability standards.

Part Context

This component belongs to the EMD9FHAT2 family of pre-biased transistor arrays. It serves as a surface-mount solution for replacing discrete resistor-transistor networks. The EMT6 package provides space efficiency compared to traditional through-hole alternatives.