EMD9T2R

Overview

The EMD9T2R is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP pre-biased transistor within an SOT-563-6 (EMT6) surface-mount package. It features a typical input resistance of 10 kOhms and a resistor ratio of 4.7. The device supports a maximum operating frequency of 250 MHz with a power dissipation rating of 150 mW. DC current gain (hFE) is specified at a minimum of 68 under standard test conditions. Collector-emitter saturation voltage is limited to 300 mV, while the collector continuous current reaches 100 mA. The unit operates up to +150°C and weighs approximately 27 mg.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors for simplified circuit design.
• Optimized for high-speed switching applications with a transition frequency of 250 MHz.
• Compact SOT-563-6 packaging facilitates dense surface-mount assembly.

Applications

• Inverter drive circuits
• High-frequency oscillator stages
• Differential amplifier inputs

Procurement Notes

Verify the specific suffix 'T2R' corresponds to the required tape-and-reel quantity of 8,000 units per manufacturer standard packaging. Confirm RoHS compliance status through official datasheets prior to integration. Ensure ordering documentation explicitly references the full part number to avoid confusion with similar EMD9 series variants that may differ in resistor values or electrical characteristics.

Selection Notes

Select this component when a matched NPN/PNP pair with fixed 10 kOhm base resistors is required for logic interfacing or signal inversion. The 250 MHz frequency rating suits RF and high-speed digital applications. Compare against single-transistor alternatives if board space permits, noting that the integrated solution reduces external component count and layout complexity for differential or push-pull configurations.

Part Context

This part belongs to the ROHM EMD9 series of complex digital transistors designed for inverter drives and general-purpose switching. It serves as a compact alternative to discrete transistor networks, offering consistent electrical matching between the NPN and PNP elements within the same silicon die. The series is characterized by low saturation voltages and high gain stability across temperature ranges.

Replacement Considerations

Direct substitutes include other ROHM EMD9 series parts such as EMD9FHAT2R, though resistor values and automotive qualification may differ. Cross-manufacturer equivalents like DTA114Y/DTC114Y combinations require careful verification of pinout compatibility and hFE specifications before substitution.