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The EMF17T2R is a pre-biased bipolar junction transistor array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within a compact EMT6 surface-mount package. The device supports a collector-emitter voltage of 50V with continuous collector currents rated at 100mA for the NPN element and 150mA for the PNP element. Transition frequencies are specified at 250MHz for the NPN configuration and 140MHz for the PNP configuration. Maximum power dissipation is limited to 150mW, ensuring reliable operation in low-power digital switching applications.
Verify the specific suffix and packaging configuration against the official datasheet before ordering. Confirm that the EMT6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS3 standards if required by the end-product specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to avoid counterfeit components.
Select this component when a compact solution requiring both NPN and PNP switching capabilities is necessary. The integrated bias resistors eliminate external resistor requirements, reducing bill-of-materials complexity. Consider the 150mW power dissipation limit and thermal characteristics during layout planning. Verify that the 50V voltage rating meets the maximum operating conditions of the target application circuit.
This component belongs to ROHM's series of pre-biased digital transistors designed for space-constrained applications. The EMT6 package provides a small form factor suitable for modern surface-mount assembly processes. It serves as an alternative to discrete transistor arrangements, offering improved consistency and reduced assembly time for dual-transistor logic functions.
Consult official substitution guides for compatible equivalents. Verify pin compatibility and electrical parameter margins before implementing any cross-brand replacements.