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The EMF18T2R is a dual pre-biased transistor array manufactured by ROHM Semiconductor, housed in an SMD EMT6 (SOT-563) package. It integrates one NPN and one PNP transistor with built-in biasing resistors. The device supports a maximum collector-emitter voltage of 50V for the NPN and 12V for the PNP. Continuous collector currents are rated at 100mA for the NPN and 500mA for the PNP. Key electrical parameters include a transition frequency of 250MHz for the NPN and 260MHz for the PNP, with a power dissipation capacity of 150mW.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and supply availability directly with authorized distributors or the manufacturer before procurement. Ensure the selected variant matches the required tape-and-reel specifications for automated assembly processes.
Select this component when a mixed NPN/PNP pre-biased pair is required in a minimal footprint. Compare the 100mA/500mA current ratings against load requirements. Verify that the 50V NPN and 12V PNP voltage limits accommodate the circuit's operating conditions. Consider the 150mW power dissipation limit for thermal management in dense PCB layouts.
This part belongs to the EMT series of complex transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, offering a solution for space-constrained designs. The EMT6 package provides a standardized form factor compatible with various surface-mount assembly techniques.
Check for direct pin-compatible alternatives within the same EMT series family. Verify that substitute parts match the NPN/PNP configuration, voltage ratings, and current capabilities. Ensure any replacement maintains the same pre-biasing resistor values if circuit stability depends on them.