EMF18XV6T1G

EMF18XV6T1G

  • Description:COMPLEMENTARY BIPOLAR DIGITAL TR
  • Series:-

SKU:e1a9e9befff6 Category: Brand:

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Product Detailed Parameters

  • Description:COMPLEMENTARY BIPOLAR DIGITAL TR
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:1 NPN - Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 120 @ 1mA, 6V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA, 500pA (ICBO)
  • Frequency - Transition:140MHz
  • Power - Max:357mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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EMF18XV6T1G

Overview

The EMF18XV6T1G is a complementary bipolar digital transistor manufactured by onsemi. It integrates one NPN and one PNP pre-biased transistor within a single SOT-563 surface-mount package. The device incorporates internal base resistors to replace discrete components and external biasing networks, thereby reducing printed circuit board space and assembly costs. Designed for high-speed switching applications, it features low saturation voltage and high current gain. The component operates with a maximum collector-emitter voltage of 50V for the NPN section and 12V for the PNP section, supporting continuous collector currents up to 100mA and 500mA respectively.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors in a compact footprint
  • Reduces component count and simplifies design by replacing discrete transistors and external resistor networks
  • Optimized for high-speed switching performance with low saturation voltage characteristics

Applications

  • General-purpose switching circuits requiring complementary logic levels
  • Driver stages for relays, solenoids, or small motors
  • Level shifting interfaces between different voltage domains in digital systems

Procurement Notes

Verify the complete part number including the suffix 'T1G' to ensure correct tape-and-reel packaging and lead-free compliance. Confirm that the SOT-563 package dimensions align with your PCB footprint requirements. Check for any specific handling precautions related to electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component when a design requires both NPN and PNP switching capabilities in a minimal area. Ensure the load current does not exceed the specified limits for each transistor type. Consider the thermal dissipation capabilities of the SOT-563 package if operating near maximum ratings in enclosed environments.

Part Context

This device belongs to onsemi's family of pre-biased transistors designed to streamline analog and digital circuit designs. It serves as a direct replacement for separate NPN/PNP pairs and their associated biasing resistors. The integration supports miniaturization trends in consumer electronics and industrial control modules where space efficiency is critical.

Replacement Considerations

Compatible substitutes include other dual BRTs from various manufacturers offering similar NPN/PNP configurations in SOT-563 packages. Verify pinout compatibility and electrical parameter equivalence before substitution.

EMF18XV6T1GEMF18XV6T1G

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