EMF18XV6T5

Overview

The EMF18XV6T5 is a dual complementary digital transistor manufactured by onsemi, integrating one NPN and one PNP bipolar junction transistor with built-in bias resistors. Housed in an SOT-563-6 surface-mount package, this component features a typical input resistance of 47 kOhms and a resistor ratio of 1. It supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 357 mW and a minimum DC current gain (hFE) of 80.

Feature Summary

• Integrates complementary NPN and PNP transistors with pre-biased resistors for simplified circuit design.

Applications

• Switching applications requiring compact dual-transistor solutions.

Procurement Notes

Verify the specific ordering suffix 'T5G' against official documentation, as the model provided lacks the suffix. Confirm RoHS compliance status through the manufacturer's datasheet or environmental declaration. Check for end-of-life notices or production discontinuation status directly from onsemi before procurement planning.

Selection Notes

Select based on the requirement for a dual complementary configuration in a small SOT-563 footprint. Ensure the 50 V voltage rating and 100 mA current capacity meet the circuit demands. Verify that the 47 kOhm internal bias resistance aligns with the intended logic interface requirements.

Part Context

This component belongs to the EMF18XV6 series of digital transistors. It is part of onsemi's portfolio of pre-biased BJT arrays designed to reduce component count and board space in switching circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult onsemi technical support for verified cross-references.