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The EMF18XV6T5G is a dual complementary digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor with pre-biased resistors in a single SOT-563-6 surface-mount package. It features a typical input resistance of 47 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 357 mW and a minimum DC current gain (hFE) of 80, it operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels due to the part's obsolete status. Confirm RoHS compliance details via official documentation before integration. Ensure storage conditions maintain integrity given the end-of-life classification. Cross-reference datasheet revisions to match specific manufacturing lot requirements for critical designs.
Select this component when a matched NPN/PNP pair with integrated biasing is required in a minimal footprint. The 47 kOhm input resistance suits standard logic levels. Consider the 50 V voltage rating and 100 mA current limit against load demands. Evaluate the SOT-563-6 package compatibility with existing PCB footprints and assembly processes.
This device belongs to the EMF18XV6 series of dual digital transistors manufactured by onsemi. It represents a consolidated solution replacing discrete transistor and resistor networks. The T5G suffix indicates the specific reel packaging configuration and RoHS-compliant material composition defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided data. Verify functional equivalents such as EMD4DXV6T5G only if electrical parameters and pinouts are explicitly validated against the original datasheet specifications.