EMF20T2R

EMF20T2R

  • Description:TRANS DIGITAL BJT NPN 50V 150MA/
  • Series:-

SKU:63f940db040f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS DIGITAL BJT NPN 50V 150MA/
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max):100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V / 180 @ 1mA, 6V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA, 100nA (ICBO)
  • Frequency - Transition:250MHz, 180MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF20T2R

Overview

The EMF20T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP transistor within an EMT6 surface-mount package. The device features a collector-emitter voltage rating of 50V for the NPN section and 12V for the PNP section. Maximum continuous collector currents are specified at 100mA for the NPN and 500mA for the PNP configurations. Transition frequencies reach 250MHz for the NPN and 260MHz for the PNP units, with a total power dissipation capability of 150mW.

Feature Summary

  • Integrates complementary NPN and PNP pre-biased transistors in a single compact package
  • Provides internal base biasing to simplify circuit design and reduce external component count
  • Offers high transition frequency performance suitable for signal processing applications

Applications

  • General-purpose digital switching circuits
  • Logic interface and level shifting stages
  • Signal amplification in consumer electronics

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the official ROHM Semiconductor documentation before integration. Confirm that the EMT6 package dimensions and pinout align with the target PCB footprint requirements. Ensure that thermal management strategies account for the 150mW power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a mixed NPN/PNP configuration is required within a limited board area. The integrated biasing resistors eliminate the need for discrete external components, reducing assembly complexity. Consider the specific voltage and current ratings of both transistor sections to ensure they meet the load requirements of the intended application without exceeding absolute maximum ratings.

Part Context

The EMF20T2R belongs to ROHM's lineup of pre-biased transistor arrays designed for space-constrained electronic designs. These devices combine standard BJT functionality with built-in biasing networks to streamline circuit implementation. The EMT6 package provides a small form factor suitable for modern surface-mount technology processes used in portable and compact electronic devices.

Replacement Considerations

Consult official ROHM Semiconductor substitution guides for verified equivalent part numbers. Cross-reference technical specifications including pinout compatibility, voltage ratings, and package dimensions to ensure functional interchangeability without redesigning the host circuit.

EMF20T2REMF20T2R

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