EMF21-7

EMF21-7

$0.12
  • Description:TRANS NPN PREBIAS/PNP SOT563
  • Series:-

SKU:de5463d65708 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/PNP SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 280MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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EMF21-7

Overview

The EMF21-7 is a complex transistor array manufactured by Diodes Incorporated, housed in an SOT-563 surface-mount package. It integrates one PNP bipolar transistor and one NPN pre-biased transistor within a single ultra-small device. The PNP section provides a collector-emitter voltage of -12 V and continuous collector current up to -500 mA. The NPN pre-biased transistor features a supply voltage rating of 50 V with an input resistance of 10 kOhms typical. Total power dissipation is rated at 300 mW, supporting an operating temperature range from -55°C to +150°C.

Feature Summary

  • Integrates one PNP bipolar transistor and one NPN pre-biased transistor in a single compact package
  • Utilizes epitaxial planar die construction for reliable performance
  • Designed as a lead-free component compliant with RoHS standards

Applications

  • General-purpose switching applications requiring mixed polarity transistors
  • Driver circuits utilizing the integrated pre-biased NPN configuration
  • Space-constrained designs needing dual-transistor functionality in SOT-563

Procurement Notes

This component is officially classified as obsolete and discontinued by the manufacturer. Verification of availability should focus on existing stock or secondary market sources rather than direct manufacturing orders. Engineering teams must initiate design changes to replace this part in active production lines due to its end-of-life status.

Selection Notes

Designers should evaluate alternative complex transistor arrays that offer similar pin configurations and electrical characteristics. Considerations must include matching the specific voltage ratings and current capabilities of both the PNP and NPN sections. Verify that replacement components fit within the same thermal and physical constraints of the original layout.

Part Context

The EMF21 belongs to the family of complex transistor arrays produced by Diodes Incorporated. These devices combine multiple discrete functions into a single footprint to reduce board space and assembly complexity. This specific model pairs a standard PNP transistor with a pre-biased NPN unit for simplified drive requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must identify equivalent components based on functional specifications and mechanical compatibility.

EMF21-7EMF21-7
$0.12
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