EMF21T2R

EMF21T2R

$0.60
  • Description:TRANS NPN PREBIAS/PNP 0.15W EMT6
  • Series:-

SKU:2888ca20990a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/PNP 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 260MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF21T2R

Overview

The EMF21T2R is a dual pre-biased transistor array manufactured by Rohm Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates one NPN and one PNP transistor within a single compact component. The device supports a maximum collector-emitter voltage of 50V for the NPN section and 12V for the PNP section. Collector currents are rated at 100mA for the NPN and 500mA for the PNP. Transition frequencies reach 250MHz for the NPN and 260MHz for the PNP. Total power dissipation is limited to 150mW. DC current gain varies from 30 to 270 depending on operating conditions.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design.
  • Provides high-speed switching capabilities suitable for RF and digital applications through optimized transition frequencies.
  • Offers low saturation voltage characteristics to minimize power loss during conduction states.

Applications

  • Digital logic level shifting circuits
  • RF amplifier driver stages
  • High-speed switching interfaces

Procurement Notes

Verify the obsolete status before procurement as the component is marked not recommended for new designs. Confirm availability through authorized distributors only. Ensure the EMT6 package footprint matches the target PCB layout. Validate that the integrated bias resistor values meet the specific drive requirements of the application circuit.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. Compare the NPN and PNP current ratings against load requirements. Consider the transition frequency limits for high-speed signal integrity. Evaluate the thermal performance given the 150mW power dissipation limit in the small SOT-563 package.

Part Context

This part belongs to Rohm's series of pre-biased transistor arrays designed to replace discrete resistor-transistor combinations. It serves as a drop-in replacement for complex discrete networks in compact consumer electronics and communication devices. The EMT6 package allows for automated assembly while maintaining reliable electrical performance in dense board layouts.

Replacement Considerations

The EMX2 is listed as a similar level replacement with the same package but different polarity configuration. Verify pin compatibility and electrical specifications before substitution. No other direct substitutes are confirmed in the provided documentation.

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