EMF23T2R

EMF23T2R

  • Description:TRANS DIGITAL BJT NPN/PNP 50V 10
  • Series:-

SKU:af5ae4700092 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS DIGITAL BJT NPN/PNP 50V 10
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN - Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 180 @ 1mA, 6V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA, 100nA (ICBO)
  • Frequency - Transition:250MHz, 140MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF23T2R

Overview

The EMF23T2R is a dual pre-biased digital transistor array manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor (BJT) with built-in bias resistors to simplify circuit design. The device supports a maximum collector-emitter voltage of 50V for the NPN section and 12V for the PNP section. Continuous collector currents are rated at 100mA for the NPN and 150mA for the PNP. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 5mA/5V for the NPN and 270 at 10mA/2V for the PNP. Saturation voltages are specified at 300mV for the NPN and 250mV for the PNP under defined conditions. Power dissipation is limited to 150mW, with a maximum operating temperature of +150°C.

Feature Summary

  • Integrates one NPN and one PNP pre-biased transistor in a single compact SMD package
  • Includes internal bias resistors to reduce external component count and board space
  • Supports high-speed switching applications with transition frequencies up to 140MHz

Applications

  • General-purpose signal switching and logic level translation
  • Driver circuits for small-signal loads in consumer electronics
  • Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly from the manufacturer before procurement. Confirm that the SOT-563-6 pinout matches the target PCB footprint design. Ensure thermal management strategies account for the 150mW power dissipation limit in the intended application environment. Check for any obsolescence notices or recommended replacement parts if the component is marked as not suitable for new designs.

Selection Notes

Select this component when a mixed NPN/PNP configuration is required in a minimal footprint. Compare saturation voltages and current gains against alternative arrays to ensure compatibility with drive levels. Consider the 150mW power dissipation constraint relative to ambient temperature and PCB copper area. Verify that the 50V NPN and 12V PNP voltage ratings exceed the maximum expected circuit voltages with adequate margin.

Part Context

The EMF23T2R belongs to ROHM's EMF series of pre-biased transistor arrays. This series is designed to replace multiple discrete components, including transistors and resistors, thereby simplifying assembly and improving reliability. The SOT-563-6 package is widely used in portable and space-constrained electronic devices. The part represents a standard solution for low-power switching tasks where integrated biasing offers design efficiency.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official ROHM resources for cross-reference information.

EMF23T2REMF23T2R

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