EMF23XV6T5G

Overview

The EMF23XV6T5G is a dual bias resistor transistor (BRT) from onsemi, integrating one NPN and one PNP bipolar junction transistor in a single SOT-563-6 surface-mount package. It operates with a maximum collector current of 100 mA and supports a collector-emitter voltage (VCEO) of 50 V for both polarities. The device features a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 357 mW, with a typical collector-emitter saturation voltage of 250 mV. It meets AEC-Q100 automotive qualification standards and utilizes silicon technology.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors to reduce component count and board space.
• Automotive-grade reliability certified under the AEC-Q100 standard for robust performance in demanding environments.
• Compact SOT-563-6 surface-mount packaging designed for efficient high-density circuit board layouts.

Applications

• Power management circuits requiring compact switching solutions
• Digital logic interface and level shifting applications
• General-purpose switching in automotive electronic control units

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm tape-and-reel quantities and lead-free compliance status. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability for automotive-grade components.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. Confirm that the 50 V voltage rating and 100 mA current capacity align with the target circuit requirements. Verify thermal constraints relative to the 357 mW power dissipation limit within the intended operating environment.

Part Context

This part belongs to the EMF5XV6 series of dual BRTs manufactured by onsemi. It shares the SOT-563-6 form factor with other devices in the family but is distinguished by its specific internal resistor values and complementary NPN/PNP configuration optimized for general digital switching tasks.

Replacement Considerations

Direct substitutes include the EMD4DXV6T5G and EMF5XV6T5G. These alternatives share the same SOT-563-6 package and electrical ratings. Verify internal resistor tolerances and hFE ranges before substitution to ensure circuit compatibility.

FAQ

What is the maximum DC collector current for this device?

The maximum continuous DC collector current is 100 mA.

Is this component qualified for automotive applications?

Yes, the EMF23XV6T5G is AEC-Q100 qualified.

What package type does this component use?

It is housed in a 6-pin SOT-563 surface-mount package.