EMF24T2R

EMF24T2R

$0.09
  • Description:TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Series:-

SKU:a1969425abc0 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max):100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 180 @ 1mA, 6V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 180MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF24T2R

Overview

The EMF24T2R is a dual transistor array manufactured by ROHM Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single compact footprint. The device features a collector-emitter voltage rating of 50V for the NPN section and 12V for the PNP section. Maximum continuous collector currents are specified at 100mA for the NPN and 500mA for the PNP. The unit offers a maximum power dissipation of 150mW and transition frequencies of 250MHz for the NPN and 260MHz for the PNP.

Feature Summary

  • Integrates independent NPN and PNP transistors into a single surface-mount package to reduce mounting area and cost.
  • Designed specifically for power management circuits requiring dual transistor functionality.

Applications

  • Power management circuits
  • Power switching applications

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's current documentation before procurement. Confirm that the component status aligns with design requirements, as availability may vary. Ensure the EMT6 package dimensions match the target PCB layout constraints.

Selection Notes

Select this component when a mixed NPN/PNP configuration is required in a space-constrained design. Compare the 100mA/500mA current ratings against load requirements. Verify that the 150mW power dissipation limit accommodates the expected thermal conditions in the final assembly.

Part Context

This part belongs to ROHM's discrete semiconductor lineup, specifically categorized under dual transistors or complex transistors. It utilizes the EMT6 package code, which corresponds to the SOT-563 physical form factor. The product serves as a solution for consolidating multiple discrete components into a single footprint.

Replacement Considerations

The EMX2 is identified as a similar level replacement with the same package type. Verify pinout compatibility and electrical specifications against the EMX2 datasheet before substitution.

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