EMF4T2R

EMF4T2R

  • Description:TRANS DIGITAL BJT NPN/PNP 12V 10
  • Series:-

SKU:670598c0aa00 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS DIGITAL BJT NPN/PNP 12V 10
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN - Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA, 100nA (ICBO)
  • Frequency - Transition:250MHz, 260MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF4T2R

Overview

The EMF4T2R is a dual digital transistor array manufactured by ROHM Semiconductor, featuring one NPN and one PNP pre-biased transistor within a single SOT-563-6 (EMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 50V and supports continuous collector currents up to 100mA for the NPN channel and 500mA for the PNP channel. The device includes built-in biasing resistors, typically 1kΩ for the NPN input and 47kΩ for the PNP input, simplifying circuit design. With a power dissipation rating of 150mW and a transition frequency reaching 250MHz/260MHz, it is suitable for high-frequency switching applications in compact electronic systems.

Feature Summary

  • Integrates complementary NPN and PNP transistors with internal biasing resistors into a single compact component
  • Provides simplified circuit design by eliminating external base resistors while maintaining stable switching performance
  • Supports high-frequency operation with transition frequencies up to 260MHz for efficient signal processing

Applications

  • High-speed switching circuits requiring complementary logic levels
  • Interface drivers between microcontrollers and peripheral devices
  • Level shifting applications in portable consumer electronics

Procurement Notes

Verify the specific suffix and tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm RoHS compliance status and ensure the EMT6 package dimensions match your PCB footprint requirements. Check for any design-not-recommended notices regarding automotive or safety-critical applications as specified in official documentation.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. Ensure the required current gain and saturation voltages align with the typical values provided in the electrical characteristics table. Consider the 150mW power dissipation limit under your expected operating temperature conditions to prevent thermal issues.

Part Context

This part belongs to ROHM's EMF series of complex digital transistors, designed to replace multiple discrete components. It serves as a direct functional replacement for separate NPN and PNP bias networks, reducing board space and assembly complexity in modern compact electronic designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative dual digital transistors from other manufacturers based on pinout, voltage ratings, and internal resistor values.

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