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The EMF5T2R is a dual digital transistor from ROHM Semiconductor, housed in an EMT6 surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single component to simplify circuit design. The device features a typical input resistance of 47 kOhms with a resistor ratio of 1. Key electrical parameters include a maximum operating frequency of 250 MHz, a collector-emitter voltage (VCEO) of 300 mV for the NPN side, and a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150 C.
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm RoHS compliance status through official documentation. Ensure the selected variant matches the required EMT6 package dimensions and terminal count for proper PCB footprint compatibility during procurement planning.
Select this component for designs requiring both NPN and PNP logic switching capabilities in a minimal footprint. Verify that the 47 kOhm base resistance aligns with the driving interface requirements. Ensure the 150 mW power dissipation rating accommodates the thermal conditions of the target application environment.
This part belongs to the EMF5 series of complex transistors manufactured by ROHM Semiconductor. It is designed as a space-saving alternative to using separate discrete NPN and PNP transistors. The EMT6 package provides a standardized form factor for surface-mount assembly in consumer and industrial electronics.
The EMX2 is listed as a similar specification replacement option. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement meets the same package and polarity requirements.