EMF5T2R

EMF5T2R

$0.59
  • Description:TRANS NPN PREBIAS/PNP 0.15W EMT6
  • Series:-

SKU:05a10a863fb1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/PNP 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 260MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF5T2R

Overview

The EMF5T2R is a dual digital transistor from ROHM Semiconductor, housed in an EMT6 surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single component to simplify circuit design. The device features a typical input resistance of 47 kOhms with a resistor ratio of 1. Key electrical parameters include a maximum operating frequency of 250 MHz, a collector-emitter voltage (VCEO) of 300 mV for the NPN side, and a continuous collector current of 100 mA. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150 C.

Feature Summary

  • Integrates one NPN and one PNP pre-biased transistor into a single compact package.
  • Reduces mounting cost and board area by consolidating two discrete transistors.
  • Simplifies power management circuit design through built-in bias resistors.

Applications

  • Power switching circuits
  • Power management applications

Procurement Notes

Verify the specific ordering suffix and packaging configuration when sourcing. Confirm RoHS compliance status through official documentation. Ensure the selected variant matches the required EMT6 package dimensions and terminal count for proper PCB footprint compatibility during procurement planning.

Selection Notes

Select this component for designs requiring both NPN and PNP logic switching capabilities in a minimal footprint. Verify that the 47 kOhm base resistance aligns with the driving interface requirements. Ensure the 150 mW power dissipation rating accommodates the thermal conditions of the target application environment.

Part Context

This part belongs to the EMF5 series of complex transistors manufactured by ROHM Semiconductor. It is designed as a space-saving alternative to using separate discrete NPN and PNP transistors. The EMT6 package provides a standardized form factor for surface-mount assembly in consumer and industrial electronics.

Replacement Considerations

The EMX2 is listed as a similar specification replacement option. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure the replacement meets the same package and polarity requirements.

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