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The EMF5XV6T5G is a dual bipolar junction transistor (BJT) from onsemi, integrating one NPN and one PNP transistor within a single SOT-563-6 surface-mount package. Constructed using silicon technology, it is designed for power switching applications where space efficiency is critical. The device features a maximum DC collector current of 100 mA and withstands collector-emitter and collector-base voltages up to 50 V. It includes an emitter-base voltage rating of 6 V and operates with a power dissipation capability of 357 mW. The component meets AEC-Q100 automotive qualification standards.
Verify the specific ordering suffix against official documentation, as variations may exist between T5G and T5G designations. Confirm RoHS compliance status through manufacturer datasheets prior to integration. Ensure the selected package matches the SOT-563-6 footprint requirements for the target PCB layout.
Select this component when a matched NPN/PNP pair is required for differential signaling or push-pull configurations in limited space. Verify that the 50 V voltage ratings and 100 mA current limits align with the circuit's operational demands. Consider the thermal constraints imposed by the 357 mW power dissipation limit in the chosen enclosure environment.
This part belongs to the EMF5XV6 series of dual BRTs manufactured by onsemi. It serves as a specialized discrete solution for integrated switching tasks, distinct from general-purpose single transistors. The series focuses on providing paired transistor functionality in standardized small-outline packages for modern electronics manufacturing.
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official cross-reference tools or contact the manufacturer directly for verified alternative components.