EMF5XV6T5G

Overview

The EMF5XV6T5G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, integrating one NPN and one PNP transistor within a single SOT-563-6 surface-mount package. Constructed from silicon, this component is qualified under the AEC-Q100 automotive standard for reliability in demanding environments. It supports a maximum DC collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 50 V, along with a collector-base voltage (VCBO) of 50 V. The device features a low collector-emitter saturation voltage of 250 mV and operates with a power dissipation rating of 357 mW. Its minimum DC current gain (hFE) is specified at 80, ensuring stable switching performance.

Feature Summary

• Integrates complementary NPN and PNP transistors into a compact dual configuration to minimize board space.
• Automotive-grade qualification ensures high reliability and durability for vehicle electronic applications.
• Low saturation voltage design facilitates efficient switching with reduced power loss during operation.

Applications

• Automotive logic circuits and interface drivers
• General-purpose switching applications requiring complementary polarity
• Signal conditioning in space-constrained electronic assemblies

Procurement Notes

Verify the specific ordering suffix to confirm the exact tape-and-reel quantity and packaging format required for your assembly line. Confirm that the AEC-Q100 qualification aligns with your system's environmental stress requirements. Ensure the SOT-563-6 footprint matches your PCB layout constraints before finalizing procurement decisions.

Selection Notes

Select this component when a matched NPN/PNP pair is needed in a minimal footprint. The 50 V voltage rating suits low-voltage digital logic interfaces. Verify that the 100 mA current capability meets the load requirements of the target circuit. Consider the thermal dissipation limits if operating near maximum ratings.

Part Context

This part belongs to the EMF5XV6 series of dual BRT (Bipolar Resistor Transistor) or discrete dual transistor arrays from onsemi. These components are designed to replace multiple discrete transistors, simplifying circuit design and reducing assembly costs. The series targets applications where size reduction and reliability are critical priorities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters carefully if considering alternative manufacturers' dual BJT arrays.