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The EMF6T2R is a dual digital transistor array manufactured by ROHM Semiconductor, housed in an SMT EMT6 package. It integrates one pre-biased PNP transistor and one N-channel MOSFET within a single surface-mount device. The PNP section supports a collector current of 500 mA with a voltage rating of 12 V, while the N-channel MOSFET handles 100 mA at 30 V. Key electrical parameters include a transition frequency of 250 MHz for the PNP and 260 MHz for the MOSFET. Power dissipation is rated at 150 mW, with saturation voltages specified at 300 mV for the PNP and 250 mV for the MOSFET under defined load conditions.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging options such as reel or cut tape availability prior to ordering. Ensure that the selected variant matches the required electrical specifications for your design application.
Select this component when space constraints necessitate combining PNP and N-channel switching functions in one footprint. Consider the 150 mW power dissipation limit and thermal management requirements for dense PCB layouts. Evaluate the distinct voltage ratings of 12 V and 30 V to ensure compatibility with system supply rails.
This part belongs to the EMF6 series of digital transistors from ROHM Semiconductor. It represents a specialized hybrid configuration designed to simplify circuit designs by replacing discrete components. The EMT6 package offers a small form factor suitable for modern consumer electronics and industrial control applications where board real estate is limited.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM Semiconductor resources for cross-reference data or equivalent alternatives meeting identical electrical and mechanical specifications.