EMF7T2R

EMF7T2R

  • Description:TRANS DIGITAL BJT NPN 12V 500MA/
  • Series:-

SKU:e63a487544c2 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS DIGITAL BJT NPN 12V 500MA/
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 20mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA, 100nA (ICBO)
  • Frequency - Transition:250MHz, 320MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF7T2R

Overview

The EMF7T2R is a pre-biased dual transistor array manufactured by ROHM Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with built-in bias resistors. The NPN section supports a collector current of 100 mA with a VCEO of 50 V and a transition frequency of 250 MHz. The PNP section handles up to 500 mA at 12 V with a 260 MHz transition frequency. Total power dissipation is rated at 150 mW.

Feature Summary

  • Integrates one pre-biased NPN and one pre-biased PNP transistor within a single compact surface-mount package.
  • Eliminates the need for external base bias resistors, simplifying circuit design and reducing component count.
  • Provides high-speed switching capabilities suitable for digital logic interfacing and signal processing applications.

Applications

  • Digital logic level shifting and interface circuits
  • Switching applications in portable electronic devices
  • Signal processing and buffer stages in consumer electronics

Procurement Notes

Verify the specific ordering suffix and tape/reel quantity requirements directly with the manufacturer or authorized distributors before purchase. Confirm that the component status aligns with current design needs, as availability may vary. Ensure that the voltage and current ratings meet the specific application constraints to prevent device failure during operation.

Selection Notes

Select this component when a compact solution requiring both NPN and PNP switching functions with integrated biasing is necessary. Consider the 150 mW power dissipation limit and the specific voltage ratings of 50 V for the NPN and 12 V for the PNP sections. Evaluate the transition frequencies to ensure adequate performance for the target signal speeds.

Part Context

This part belongs to ROHM's series of pre-biased transistor arrays designed for space-constrained applications. It replaces discrete transistor and resistor combinations, offering a standardized footprint compatible with automated assembly processes. The EMT6 package provides thermal and electrical performance optimized for modern surface-mount technology lines.

Replacement Considerations

Check for direct equivalents from other manufacturers that offer identical pinouts and electrical characteristics. Verify that any substitute maintains the same pre-biasing configuration and package dimensions to ensure mechanical compatibility without redesigning the PCB layout.

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