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The EMF7T2R is a pre-biased dual transistor array manufactured by ROHM Semiconductor, housed in an EMT6 (SOT-563) surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with built-in bias resistors. The NPN section supports a collector current of 100 mA with a VCEO of 50 V and a transition frequency of 250 MHz. The PNP section handles up to 500 mA at 12 V with a 260 MHz transition frequency. Total power dissipation is rated at 150 mW.
Verify the specific ordering suffix and tape/reel quantity requirements directly with the manufacturer or authorized distributors before purchase. Confirm that the component status aligns with current design needs, as availability may vary. Ensure that the voltage and current ratings meet the specific application constraints to prevent device failure during operation.
Select this component when a compact solution requiring both NPN and PNP switching functions with integrated biasing is necessary. Consider the 150 mW power dissipation limit and the specific voltage ratings of 50 V for the NPN and 12 V for the PNP sections. Evaluate the transition frequencies to ensure adequate performance for the target signal speeds.
This part belongs to ROHM's series of pre-biased transistor arrays designed for space-constrained applications. It replaces discrete transistor and resistor combinations, offering a standardized footprint compatible with automated assembly processes. The EMT6 package provides thermal and electrical performance optimized for modern surface-mount technology lines.
Check for direct equivalents from other manufacturers that offer identical pinouts and electrical characteristics. Verify that any substitute maintains the same pre-biasing configuration and package dimensions to ensure mechanical compatibility without redesigning the PCB layout.