EMF8T2R

EMF8T2R

$0.12
  • Description:TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Series:-

SKU:1c8567627582 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/NPN 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 320MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF8T2R

Overview

The EMF8T2R is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor, housed in an EMT6 surface-mount package. It integrates one NPN and one PNP transistor with built-in biasing resistors to simplify circuit design. The device supports a maximum collector-emitter voltage of 50V for the NPN section and -50V for the PNP section. Continuous collector currents are rated at 100mA for the NPN and 500mA for the PNP configurations. Transition frequencies reach 250MHz for the NPN and 260MHz for the PNP units, with a total power dissipation capability of 150mW.

Feature Summary

  • Integrates one NPN and one PNP pre-biased transistor pair within a single compact surface-mount package
  • Includes internal biasing resistors to reduce external component count and simplify driver circuit design
  • Designed for high-frequency switching applications with transition frequencies up to 260MHz

Applications

  • Driver circuits for logic interfaces
  • Switching applications in portable devices
  • General-purpose digital signal buffering

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's current documentation before procurement. Confirm that the component status aligns with project requirements, as availability may vary. Ensure compatibility with automated placement equipment regarding the EMT6 package dimensions and pin configuration.

Selection Notes

Select this component when a dual NPN/PNP pre-biased configuration is required in a minimal footprint. Compare the 100mA/500mA current ratings and 50V voltage limits against load requirements. Verify that the integrated resistor values meet the specific drive current needs of the connected logic gates or loads without requiring external components.

Part Context

This part belongs to Rohm Semiconductor's family of complex transistors designed to replace discrete BJT and resistor networks. The EMT6 package provides a space-efficient solution for high-density PCB layouts. These devices are commonly used to interface microcontrollers with higher-current loads or to level-shift signals between different voltage domains in consumer electronics.

Replacement Considerations

Check for direct pin-compatible alternatives from Rohm or other manufacturers offering similar NPN/PNP pre-biased arrays in SOT-363 or equivalent packages. Verify that substitute parts match the 50V rating and current capabilities. Ensure the replacement maintains the same transition frequency specifications for high-speed switching applications.

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