EMF9T2R

EMF9T2R

$0.15
  • Description:TRANS DUAL BIP+MOS EMT6
  • Series:-

SKU:7603cb9ecc42 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS DUAL BIP+MOS EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN, N-Channel
  • Applications:General Purpose
  • Voltage - Rated:12V NPN, 30V N-Channel
  • Current Rating (Amps):500mA NPN, 100mA N-Channel
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMF9T2R

Overview

The EMF9T2R is a dual digital transistor from ROHM Semiconductor, featuring one NPN and one PNP pre-biased transistor within an EMT6 (SOT-563) surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter saturation voltage of 300 mV at 500 µA/10 mA for the NPN side and 250 mV at 10 mA/200 mA for the PNP side. The device supports a maximum continuous collector current of 100 mA for the NPN and 500 mA for the PNP, with a power dissipation of 150 mW and a transition frequency up to 260 MHz.

Feature Summary

  • Integrates one NPN and one PNP pre-biased transistor in a single compact SMD package
  • Includes built-in bias resistors to reduce external component count and board space
  • Optimized for high-speed switching applications with transition frequencies up to 260 MHz

Applications

  • Inverter drive circuits requiring complementary switching
  • High-frequency signal processing interfaces
  • Logic level shifting between different voltage domains

Procurement Notes

Verify the specific suffix 'T2R' confirms the tape-and-reel packaging format intended for automated assembly. Confirm RoHS compliance status through the official datasheet or manufacturer certification documents prior to integration into regulated products. Ensure the EMT6 package dimensions match your PCB footprint requirements exactly.

Selection Notes

Select this component when a mixed NPN/PNP configuration is required in a minimal footprint. Compare the 150 mW power dissipation limit against your thermal management capabilities. Verify that the 100 mA and 500 mA current ratings for the respective transistors meet your load requirements without exceeding the total power budget.

Part Context

This part belongs to ROHM's digital transistor family, which combines bipolar junction transistors with internal biasing networks. These devices are designed to replace multiple discrete components, simplifying schematic design and improving reliability by reducing solder joints. The EMF series specifically targets applications needing both NPN and PNP logic functions in a shared package.

Replacement Considerations

Check for direct pin-compatible substitutes within the same EMT6 package family. Verify that any alternative maintains the same NPN/PNP polarity combination and similar saturation voltage characteristics to ensure circuit compatibility.

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