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The EMF9T2R is a dual digital transistor from ROHM Semiconductor, featuring one NPN and one PNP pre-biased transistor within an EMT6 (SOT-563) surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter saturation voltage of 300 mV at 500 µA/10 mA for the NPN side and 250 mV at 10 mA/200 mA for the PNP side. The device supports a maximum continuous collector current of 100 mA for the NPN and 500 mA for the PNP, with a power dissipation of 150 mW and a transition frequency up to 260 MHz.
Verify the specific suffix 'T2R' confirms the tape-and-reel packaging format intended for automated assembly. Confirm RoHS compliance status through the official datasheet or manufacturer certification documents prior to integration into regulated products. Ensure the EMT6 package dimensions match your PCB footprint requirements exactly.
Select this component when a mixed NPN/PNP configuration is required in a minimal footprint. Compare the 150 mW power dissipation limit against your thermal management capabilities. Verify that the 100 mA and 500 mA current ratings for the respective transistors meet your load requirements without exceeding the total power budget.
This part belongs to ROHM's digital transistor family, which combines bipolar junction transistors with internal biasing networks. These devices are designed to replace multiple discrete components, simplifying schematic design and improving reliability by reducing solder joints. The EMF series specifically targets applications needing both NPN and PNP logic functions in a shared package.
Check for direct pin-compatible substitutes within the same EMT6 package family. Verify that any alternative maintains the same NPN/PNP polarity combination and similar saturation voltage characteristics to ensure circuit compatibility.