EMG11T2R

EMG11T2R

$0.43
  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-

SKU:7a3ef949660f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD (5 Leads), Flat Leads
  • Supplier Device Package:EMT5

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EMG11T2R

Overview

The EMG11T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It features a typical input resistance of 2.2 kOhms and a resistor ratio of 21. The device supports a collector continuous current of 100 mA with a maximum operating frequency of 250 MHz. Key electrical limits include a collector-emitter voltage (VCEO) rating contextually associated with the series, an emitter-base voltage (VEBO) of 1.1 V, and a power dissipation (Pd) of 150 mW. The minimum DC current gain (hFE) is specified as 80 at 10 mA and 5 V. It operates up to +150°C and is supplied in reel, cut tape, or MouseReel formats.

Feature Summary

  • Integrates two independent NPN transistor elements within a single compact SMD footprint to reduce mounting area and cost.
  • Includes built-in bias resistors to simplify circuit design and eliminate external component requirements for switching applications.
  • Provides high-speed switching capability suitable for general-purpose signal processing and logic interface tasks.

Applications

  • General-purpose small-signal amplification
  • Logic level shifting and interface circuits
  • Switching applications in portable electronic devices

Procurement Notes

Verify the specific ordering suffix and packaging configuration against the manufacturer's latest datasheet before procurement. Confirm that the received components match the EMG11T2R part number exactly, as variations in tape and reel specifications may exist. Ensure compliance with RoHS directives if required by the final assembly standards. Cross-reference the manufacturer code to avoid counterfeit components during sourcing.

Selection Notes

Select this component when a dual NPN configuration with low input resistance is required for high-drive applications. The 2.2 kOhm input resistor suits interfaces needing stronger base drive currents compared to higher resistance variants. Consider the SOT-553-5 package constraints for PCB layout density. Evaluate the 100 mA collector current limit against the load requirements to ensure adequate margin under peak operating conditions.

Part Context

The EMG11T2R belongs to the EMG11 series of complex transistors from ROHM Semiconductor. This series consolidates discrete transistor and resistor functions into unified packages. The dual NPN architecture allows for complementary switching or differential configurations without increasing board space. It serves as a space-saving alternative to using separate transistors and external biasing resistors in consumer electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence with any potential alternative components before implementation.

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