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The EMG1T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-553-5 surface-mount package. This component integrates two independent NPN transistors with built-in bias resistors to simplify circuit design and reduce board space. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA per element. The device features a typical input resistance of 4.7 kOhms and a resistor ratio of 1. It supports a maximum operating frequency of 250 MHz and maintains a low saturation voltage of 300 mV at specified currents. The unit operates within a temperature range up to +150 °C and complies with RoHS standards.
Verify the specific suffix 'T2R' indicates tape-and-reel packaging when ordering. Confirm the manufacturer part number matches exactly, as variations may exist in resistor values or voltage ratings across similar series members. Check for lead times as production cycles may vary. Ensure compatibility with automated pick-and-place equipment given the SOT-553-5 form factor.
Select this component when a dual NPN configuration with integrated biasing is required to save PCB space. Compare input resistance values against other models in the EMG series to match drive requirements. Verify that the 50 V VCEO rating exceeds the maximum circuit voltage. Consider the 100 mA IC limit for load current capabilities. Ensure the thermal dissipation characteristics fit the application's power constraints.
The EMG1T2R belongs to ROHM's EMG series of digital transistors, which are designed to replace discrete resistor-transistor networks. These components are widely used in portable devices and industrial equipment where space efficiency and assembly cost reduction are critical. The series offers various combinations of NPN/PNP polarities and resistor ratios to suit different logic interface needs.
Direct replacements should be sought from the same EMG series with matching pinout and electrical ratings. Verify equivalent resistor values and hFE characteristics. Cross-reference with other manufacturers' dual digital transistor offerings if supply constraints exist, ensuring package compatibility and parameter alignment.