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The EMG2DXV5T1 is a dual pre-biased NPN digital transistor array manufactured by onsemi, housed in a surface-mount SOT-553 package. It integrates two NPN transistors with internal biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a typical base input resistance of 47 kOhms and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 230 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix 'T1' against official onsemi documentation to confirm tape-and-reel packaging and exact resistor values, as suffixes often denote packaging or variant differences. Confirm end-of-life status through manufacturer notices before finalizing procurement plans due to potential obsolescence risks associated with older part numbers.
Select this component when a dual NPN switch with integrated biasing is required in a small footprint. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Compare the 47kOhm base resistance against drive source capabilities to verify adequate base current for saturation. Consider the SOT-553 thermal performance for the intended power dissipation environment.
This part belongs to the EMG2DX series of pre-biased transistor arrays from onsemi. These devices are designed to replace multiple discrete components, offering a simplified solution for switching and amplification tasks. The SOT-553 package provides a compact form factor suitable for modern high-density PCB layouts.
Check for direct pin-compatible alternatives such as the EMC2DXV5T1G if PNP/NPN combinations are needed, or other SOT-553 dual NPN arrays from onsemi. Verify that any substitute matches the 50V VCEO, 100mA Ic, and 47kOhm base resistance specifications.