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The EMG2DXV5T1G is a dual NPN bias resistor transistor manufactured by onsemi, housed in a compact SOT-553 surface-mount package. It integrates two NPN silicon transistors with monolithic bias resistors, offering a typical resistance of 47 kΩ per channel with a matched ratio of 1. The device supports a maximum collector-emitter voltage (Vce) of 50 V and a continuous collector current of 100 mA. With a power dissipation rating of 338 mW and an operating temperature range from -55°C to +150°C, it provides efficient switching and amplification in space-constrained designs.
Verify the manufacturer part number EMG2DXV5T1G against official onsemi documentation to confirm availability and specifications. Ensure compatibility with SOT-553 footprint requirements during procurement planning. Check for any specific handling or storage conditions mandated by the manufacturer datasheet prior to ordering.
Select this component when dual NPN switching with integrated biasing is required in a minimal footprint. The 47 kΩ resistor value suits standard logic interface levels. Verify that the 50 V Vce rating meets the circuit's voltage requirements and that the 100 mA current capacity is sufficient for the load. Consider thermal constraints given the 338 mW power dissipation limit in the small package.
This device belongs to onsemi's family of dual bias resistor transistors designed for surface-mount applications. It replaces discrete transistor and resistor combinations, reducing component count and assembly time. The SOT-553 package offers a small outline dimension of 1.7 x 1.3 mm, making it ideal for modern miniaturized electronic devices where space is at a premium.
Cross-reference with other dual NPN BRTs in SOT-553 packages from onsemi or other manufacturers. Ensure equivalent Vce, Ic, and resistor values match the original design requirements before substitution.