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The EMG2DXV5T5G is a dual NPN digital transistor in a SOT-553 package. It features a common emitter configuration with two integrated transistors. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The typical input resistance is 47 kOhms, with a resistor ratio of 1. Minimum DC current gain (hFE) is 80. Power dissipation is rated at 230 mW. Operating temperature ranges from -55°C to +150°C.
Verify the exact part number suffix, as the provided model lacks the trailing 'G'. Manufacturer documentation typically uses EMG2DXV5T5G. Confirm end-of-life status and availability through authorized distributors. Ensure RoHS compliance matches project requirements. Check for alternative packages if lead times are critical.
Select this component when dual NPN switching with integrated base resistors is required. The 47 kOhm input resistance suits standard logic levels. Verify thermal management for power dissipation limits. Consider the SOT-553 footprint constraints during PCB layout. Compare against single-transistor alternatives if only one channel is needed.
This device belongs to the EMG2DXV5 series of digital transistors from onsemi. These components combine NPN transistors with internal biasing networks. The series offers various resistor values and configurations. The SOT-553 package provides a small form factor for modern electronics.
Check for direct pin-compatible substitutes within the same manufacturer's portfolio. Verify equivalent electrical characteristics such as VCEO, IC, and hFE. Ensure the replacement maintains the same package type and thermal performance. Consult official substitution guides for validated alternatives.