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The EMG2DXV5T5G is a dual NPN digital transistor in a SOT-553 package. It features a common emitter configuration with two integrated transistors. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The typical input resistance is 47 kOhms, with a resistor ratio of 1. Minimum DC current gain (hFE) is 80. Power dissipation is rated at 230 mW. Operating temperature ranges from -55 C to +150 C.
Verify component authenticity through authorized onsemi channels or certified distributors. Confirm RoHS compliance status via official documentation. Check for End-of-Life notices as availability may be limited. Ensure storage conditions meet moisture sensitivity requirements prior to assembly.
Select this component when a dual NPN configuration with integrated base resistors is required. Verify that the 50 V voltage rating and 100 mA current capacity meet circuit demands. Consider the SOT-553 footprint constraints during PCB layout. Compare thermal performance against system power dissipation limits.
This part belongs to the EMG2DXV5 series of dual digital transistors. It shares the SOT-553 form factor with other variants in the family. The series provides integrated resistor networks for simplified biasing. It serves as a compact alternative to discrete transistor pairs.
Check for direct pin-compatible substitutes within the same manufacturer's portfolio. Verify equivalent electrical characteristics such as VCEO, IC, and Rb values. Ensure package dimensions match existing footprints. Confirm functional compatibility before replacing obsolete stock.