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The EMG2T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It features a typical input resistance of 10 kOhms with a resistor ratio of 4.7. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 68 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The saturation voltage is specified at 100 mV, with an emitter-base voltage (VEBO) of 1.4 V.
Verify the specific suffix 'T2R' to confirm tape-and-reel packaging configuration. Ensure compatibility with standard SMT assembly processes for the SOT-553 footprint. Cross-reference official datasheets for exact binning and testing conditions prior to integration into production designs.
Select this component when a dual NPN configuration with moderate drive capability is required. The 10 kOhm input resistance suits standard logic outputs. Consider alternative resistor ratios if higher or lower base drive currents are necessary for specific load conditions.
This part belongs to ROHM's EMG series of digital transistors, which combine bipolar junction transistors with internal biasing networks. The series is designed to reduce external component count and PCB space while maintaining consistent electrical performance across manufacturing batches.
The EMH1T2R serves as a functional substitute within the same manufacturer lineup, offering identical SOT-563-6 packaging and dual NPN polarity. Verify pinout compatibility and specific hFE gain ranges before substituting.