EMG2T2R

EMG2T2R

$0.45
  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-

SKU:758f4100cd9c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD (5 Leads), Flat Leads
  • Supplier Device Package:EMT5

Download product information

EMG2T2R

Overview

The EMG2T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It features a typical input resistance of 10 kOhms with a resistor ratio of 4.7. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 68 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The saturation voltage is specified at 100 mV, with an emitter-base voltage (VEBO) of 1.4 V.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 250 MHz maximum operating frequency
  • Designed for low-voltage logic interfacing with minimal saturation voltage

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for small-signal loads in portable devices
  • Logic level translation between microcontrollers and peripheral components

Procurement Notes

Verify the specific suffix 'T2R' to confirm tape-and-reel packaging configuration. Ensure compatibility with standard SMT assembly processes for the SOT-553 footprint. Cross-reference official datasheets for exact binning and testing conditions prior to integration into production designs.

Selection Notes

Select this component when a dual NPN configuration with moderate drive capability is required. The 10 kOhm input resistance suits standard logic outputs. Consider alternative resistor ratios if higher or lower base drive currents are necessary for specific load conditions.

Part Context

This part belongs to ROHM's EMG series of digital transistors, which combine bipolar junction transistors with internal biasing networks. The series is designed to reduce external component count and PCB space while maintaining consistent electrical performance across manufacturing batches.

Replacement Considerations

The EMH1T2R serves as a functional substitute within the same manufacturer lineup, offering identical SOT-563-6 packaging and dual NPN polarity. Verify pinout compatibility and specific hFE gain ranges before substituting.

EMG2T2REMG2T2R
$0.45
Buy Now