EMG3T2R

Overview

The EMG3T2R is a dual NPN digital transistor from the ROHM Semiconductor EMG3 series, housed in an SOT-553-5 (EMT3) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a typical input base resistor of 4.7 kOhms and achieves a minimum DC current gain of 100 at 1 mA and 5 V. It supports a maximum operating frequency of 250 MHz and has a power dissipation rating of 150 mW, with a maximum operating temperature of +150°C.

Feature Summary

• Integrates dual NPN transistors with pre-bias resistors for simplified circuit implementation
• Optimized for high-speed switching applications with a 250 MHz transition frequency
• Designed for compact surface-mount assembly in small outline packages

Applications

• General-purpose switching circuits
• Driver circuits for logic interfaces
• Signal level shifting applications

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status through certified documentation. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Validate package integrity upon receipt to prevent damage during handling.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a compact footprint. Consider the 4.7 kOhm input resistance value for base drive calculations. Verify that the 50 V voltage rating and 100 mA current capacity meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the ROHM EMG3 series of digital transistors, which are designed to replace discrete resistor-transistor combinations. The series offers various resistor values and configurations to accommodate different logic families and driving requirements while maintaining a consistent small-package form factor for space-constrained designs.

Replacement Considerations

Cross-reference with other dual NPN digital transistors in the SOT-553 package if availability is limited. Ensure substitute parts match the 50 V rating, 100 mA current capacity, and similar input resistance characteristics to maintain circuit performance.