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The ROHM Semiconductor EMG4T2R is a dual NPN digital transistor housed in an SOT-553-5 surface-mount package. It integrates two NPN transistors with built-in bias resistors, featuring a typical input resistance of 10 kOhms. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hfe) of 100 at 1 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 150 mW. The emitter-base voltage (VEBO) is rated at 5 V, and the component operates within a temperature range up to +150 C.
Verify the specific ordering suffix and tape-and-reel quantity requirements directly with authorized distributors or the manufacturer before placing orders. Confirm RoHS compliance status and lead times through official supply chain channels, as availability may vary by region and production batch.
Select this component when a dual NPN configuration with 10 kOhm input resistance is required. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit loads. Compare against other EMG series variants if different input resistance values or gain characteristics are needed for specific impedance matching.
The EMG4T2R belongs to the EMG4 series of complex transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The series is part of ROHM's broader portfolio of digital transistors intended for consumer electronics and industrial control systems.
Check for direct equivalents such as the DTC143Z single-transistor alternative if only one channel is needed. Verify pinout compatibility when substituting with other SOT-553 packages from different manufacturers.