ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS DUAL BIAS NPN 50V SOT-563
- Series：*
- Mfr：onsemi
- Package：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
Download product information
Overview
The EMG5DXV5T1 is a dual bias resistor transistor (BRT) from onsemi, featuring two NPN silicon transistors integrated with a monolithic bias resistor network in a single surface-mount package. Designed for digital switching applications, it simplifies circuit design by reducing component count and board space. The device operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. It includes built-in base and emitter resistors to facilitate direct interface with logic outputs. The unit is housed in a compact SOT-553-5 package, suitable for high-density PCB layouts.
Feature Summary
- Integrates dual NPN transistors with monolithic bias resistor network
- Reduces printed circuit board area and assembly complexity
- Provides stable switching performance with fixed input resistance
Applications
- Digital signal buffering and level shifting
- Gate driving for small-signal MOSFETs or IGBTs
- Logic interface circuits between microcontrollers and peripherals
Procurement Notes
Verify the specific suffix configuration against the manufacturer's latest datasheet to ensure correct resistor values and polarity. Confirm availability status as product lifecycles may change. Request official RoHS compliance documentation prior to finalizing procurement orders for regulatory adherence.
Selection Notes
Select this component when space constraints require integrating both transistor and biasing elements. Ensure the required base current matches the internal resistor value to guarantee saturation. Compare thermal dissipation capabilities against the application's power budget to prevent overheating in enclosed environments.
Part Context
This part belongs to onsemi's EMG series of dual BRTs, designed to replace discrete resistor-transistor combinations. It serves as a drop-in replacement for various legacy dual transistor arrays, offering improved consistency and reduced parasitic effects due to the monolithic construction within the SOT-553 footprint.
Replacement Considerations
Direct substitutes include the EMG5DXV5T1G variant, which denotes RoHS compliance. Other compatible dual NPN BRTs in SOT-553 packages from different manufacturers may be considered if pinout and electrical characteristics align precisely.
