EMG5T2R

EMG5T2R

$0.43
  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-

SKU:236dfe88b2dd Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD (5 Leads), Flat Leads
  • Supplier Device Package:EMT5

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EMG5T2R

Overview

The EMG5T2R is a dual NPN digital transistor from the ROHM Semiconductor EMG5 series, housed in an SOT-553-5 (EMT5) surface-mount package. It integrates two NPN transistors with typical input resistors of 10 kOhms and a resistor ratio of 4.7. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 300 mV, continuous collector current of 100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hFE) of 68 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and an emitter-base voltage (VEBO) of 1.4 V. It supports operation up to +150°C.

Feature Summary

  • Integrates dual NPN transistors with built-in biasing resistors for simplified circuit design.
  • Optimized for high-speed switching applications with a transition frequency of 250 MHz.
  • Compact SMD/SMT packaging suitable for space-constrained board layouts.

Applications

  • General-purpose switching circuits
  • Driver circuits for logic interfaces
  • Level shifting applications

Procurement Notes

Verify component authenticity through authorized ROHM Semiconductor distributors or certified partners. Request original datasheets and material compliance certificates to ensure adherence to RoHS standards. Confirm package markings match the SOT-553-5 specification. Validate batch traceability records prior to integration into production lines.

Selection Notes

Select this component when low saturation voltage and moderate current drive are required in a dual configuration. Compare input resistance values against other EMG series variants if specific base drive currents differ. Ensure the 300 mV VCEO rating aligns with the target load voltage requirements to prevent breakdown during operation.

Part Context

The EMG5T2R belongs to the EMG5 series of pre-biased transistors designed for replacing discrete resistor-transistor combinations. It consolidates two NPN devices into a single compact footprint, reducing assembly complexity and board area compared to individual components.

Replacement Considerations

The EMH59T2R is listed as a recommended alternative by Mouser. Verify pin compatibility and electrical parameter alignment before substitution.

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