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The EMG5T2R is a dual NPN digital transistor from the ROHM Semiconductor EMG5 series, housed in an SOT-553-5 (EMT5) surface-mount package. It integrates two NPN transistors with typical input resistors of 10 kOhms and a resistor ratio of 4.7. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 300 mV, continuous collector current of 100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hFE) of 68 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and an emitter-base voltage (VEBO) of 1.4 V. It supports operation up to +150°C.
Verify component authenticity through authorized ROHM Semiconductor distributors or certified partners. Request original datasheets and material compliance certificates to ensure adherence to RoHS standards. Confirm package markings match the SOT-553-5 specification. Validate batch traceability records prior to integration into production lines.
Select this component when low saturation voltage and moderate current drive are required in a dual configuration. Compare input resistance values against other EMG series variants if specific base drive currents differ. Ensure the 300 mV VCEO rating aligns with the target load voltage requirements to prevent breakdown during operation.
The EMG5T2R belongs to the EMG5 series of pre-biased transistors designed for replacing discrete resistor-transistor combinations. It consolidates two NPN devices into a single compact footprint, reducing assembly complexity and board area compared to individual components.
The EMH59T2R is listed as a recommended alternative by Mouser. Verify pin compatibility and electrical parameter alignment before substitution.