EMG6T2R

EMG6T2R

$0.32
  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-

SKU:d142789e2bf2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD (5 Leads), Flat Leads
  • Supplier Device Package:EMT5

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EMG6T2R

Overview

The EMG6T2R is a dual digital NPN transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It integrates bias resistors with a typical input resistance of 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hfe) of 100 at 1 mA and 5 V, with a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, and the emitter-base voltage (VEBO) is specified at 5 V. The component operates within a temperature range up to +150 C.

Feature Summary

  • Dual NPN configuration with built-in bias resistors for simplified circuit design
  • High-speed switching capability supported by a 250 MHz maximum operating frequency
  • Compact SMD/SMT packaging suitable for space-constrained applications

Applications

  • General-purpose switching circuits requiring integrated biasing
  • Driver stages for logic interfaces
  • Signal processing applications utilizing high-frequency operation

Procurement Notes

Verify the specific ordering code against manufacturer documentation to ensure correct suffix alignment. Confirm RoHS compliance status through official datasheets prior to integration. Cross-reference pinout configurations with ECAD models to prevent mounting errors during assembly processes.

Selection Notes

Select this component when dual NPN switching with integrated base resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet circuit demands. Verify that the 47 kOhm input resistance aligns with drive source capabilities and power dissipation limits are respected under thermal constraints.

Part Context

This part belongs to the EMG6 series of digital transistors from ROHM Semiconductor. It represents a compact solution combining two NPN transistors with associated resistive networks in a single surface-mount footprint, designed to reduce component count and board space in electronic designs.

Replacement Considerations

Consult official substitution guides for equivalent dual NPN digital transistors in SOT-553 packages. Verify matching electrical parameters including VCEO, IC, and hfe before implementing any alternative components.

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