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The EMG6T2R is a dual digital NPN transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It integrates bias resistors with a typical input resistance of 47 kOhms. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hfe) of 100 at 1 mA and 5 V, with a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, and the emitter-base voltage (VEBO) is specified at 5 V. The component operates within a temperature range up to +150 C.
Verify the specific ordering code against manufacturer documentation to ensure correct suffix alignment. Confirm RoHS compliance status through official datasheets prior to integration. Cross-reference pinout configurations with ECAD models to prevent mounting errors during assembly processes.
Select this component when dual NPN switching with integrated base resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet circuit demands. Verify that the 47 kOhm input resistance aligns with drive source capabilities and power dissipation limits are respected under thermal constraints.
This part belongs to the EMG6 series of digital transistors from ROHM Semiconductor. It represents a compact solution combining two NPN transistors with associated resistive networks in a single surface-mount footprint, designed to reduce component count and board space in electronic designs.
Consult official substitution guides for equivalent dual NPN digital transistors in SOT-553 packages. Verify matching electrical parameters including VCEO, IC, and hfe before implementing any alternative components.