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The EMG8T2R is a dual NPN digital transistor from the ROHM EMG series, housed in an EMT5 (SOT-553) surface-mount package. It integrates two NPN transistors with built-in biasing resistors for simplified circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a typical input resistance (R1) ranging from 1 kΩ to 4.7 kΩ and an emitter-base resistance (R2) between 1 kΩ and 47 kΩ. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific lot traceability requirements relevant to your manufacturing standards. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package damage prior to soldering.
Select this component when a dual NPN solution with fixed biasing is required in an SOT-553 footprint. Compare input resistance values against your drive source capabilities to ensure proper logic threshold compatibility. Verify that the 50V voltage rating exceeds your circuit's peak operational voltages under all load conditions.
This part belongs to the EMG series of complex transistors designed as replacements for discrete resistor-transistor networks. It consolidates two NPN transistors and associated biasing components into a single five-terminal package, reducing assembly complexity and PCB area compared to using separate discrete devices.
Public documentation identifies DTC143Z as an equivalent single-part alternative. No other verified substitute part numbers are confirmed in the provided source material.