EMG9T2R

EMG9T2R

$0.45
  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-

SKU:226caa46c112 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD (5 Leads), Flat Leads
  • Supplier Device Package:EMT5

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EMG9T2R

Overview

The EMG9T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-553-5 surface-mount package. It integrates two NPN transistors with typical input resistors of 10 kOhms and a resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 300 mV, continuous collector current of 100 mA, and power dissipation of 150 mW. The device supports a maximum operating frequency of 250 MHz and operates up to +150°C. Minimum DC current gain (hFE) is specified at 30 under conditions of 5 mA and 5 V.

Feature Summary

  • Dual NPN configuration within a compact SMD footprint
  • Integrated base biasing network for simplified circuit design
  • High-frequency operation capability up to 250 MHz

Applications

  • General-purpose switching applications
  • Driver circuits for low-voltage logic interfaces
  • Signal level shifting in embedded systems

Procurement Notes

Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging format before ordering. Confirm that the 300 mV VCEO rating aligns with the target application's saturation requirements, as this value indicates a specialized low-saturation or specific logic-level variant rather than a standard high-voltage switch. Ensure compatibility with SOT-553-5 footprints during PCB layout.

Selection Notes

Select this component when a dual NPN digital transistor with integrated biasing is required in a small outline package. The 10 kOhm input resistance suits moderate drive currents. Compare against the EMG5T2R if a higher hFE of 68 is needed, or the EMH9T2R if a different package like EMT6 is preferred. Verify that the 300 mV VCEO specification meets the circuit's voltage drop constraints.

Part Context

The EMG9T2R belongs to the EMG9 series of complex transistors from ROHM. These devices combine NPN transistors with internal resistors to reduce board space and assembly costs. The part is distinct from the EMD and EMH series by its specific pinout, polarity, and electrical characteristics within the SOT-553 form factor.

Replacement Considerations

The EMH61T2R is listed as a recommended alternative. Verify pin compatibility and electrical parameter alignment, particularly the input resistance and voltage ratings, before substituting.

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