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The EMH10FHAT2R is a dual digital transistor manufactured by ROHM Semiconductor, featuring two independent NPN bias resistor built-in transistors within a single SOT-563 (EMT6) surface-mount package. Designed for automotive applications, it holds AEC-Q101 qualification and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 50 V. The device incorporates an internal base input resistance of 10 kOhms and an emitter-base resistance ratio of 4.7, facilitating simplified circuit design. It operates reliably up to a maximum junction temperature of +150°C while maintaining a power dissipation capacity of 150 mW.
Verify the specific suffix configuration against official ROHM documentation to ensure correct electrical parameters. Confirm AEC-Q101 compliance requirements match the target application environment. Check for end-of-life status updates prior to finalizing procurement plans.
Select this component when space-constrained designs require dual NPN switching with integrated base resistors. Ensure the 10 kOhm input resistance aligns with the driving source impedance. Verify that the 50 V voltage rating exceeds the maximum expected line voltage in the target circuit topology.
This part belongs to ROHM's EMH series of dual digital transistors, which are engineered to replace discrete resistor-transistor networks. The series focuses on miniaturization and cost reduction for automotive electronics. The EMH10FHAT2R specifically utilizes the EMT6 package format common across the family.
Direct substitutes include other ROHM dual NPN digital transistors in the SOT-563 package with similar 10 kOhm input resistance values. Cross-reference pinouts and saturation voltages carefully when considering non-ROHM alternatives.