EMH10T2R

EMH10T2R

$0.45
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:16fced58325c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH10T2R

Overview

The EMH10T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 21. The device supports a collector continuous current of 100 mA and a maximum operating frequency of 250 MHz. Key electrical limits include a collector-emitter voltage (VCEO) of 50 V, an emitter-base voltage (VEBO) of 1.1 V, and power dissipation of 150 mW. Minimum DC current gain (hfe) is specified at 80 under defined test conditions.

Feature Summary

  • Dual NPN configuration within a compact SMD/SMT footprint
  • Integrated bias resistors for simplified circuit design
  • High-speed operation capability up to 250 MHz

Applications

  • General-purpose switching circuits
  • Driver applications for low-current loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix T2R corresponds to the required tape-and-reel packaging format before ordering. Confirm that the 50 V rating and 100 mA current capacity align with the target application's electrical requirements. Ensure compatibility with the SOT-563-6 land pattern during PCB layout. Check RoHS compliance documentation if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a dual NPN digital transistor with a 2.2 kOhm base resistor is required. Compare against alternatives like EMH60T2R or EMH4T2R if different input resistance values or voltage ratings are needed. Consider the 150 mW power dissipation limit for thermal management in dense layouts. Verify that the 250 MHz frequency response meets the signal speed requirements of the design.

Part Context

This part belongs to the EMH10 series of dual digital transistors from ROHM Semiconductor. It shares the SOT-563-6 package form factor with other variants in the family, such as EMH4T2R and EMH60T2R, which differ primarily in internal resistor values and voltage specifications. The series is designed for space-constrained surface-mount applications requiring integrated biasing.

Replacement Considerations

The VT6Z1 is listed as a similar level replacement option in related documentation, though it features a different polarity configuration (NPN+PNP) and package dimensions. Direct pin-to-pin substitution requires careful verification of electrical parameters and internal resistor configurations against the original design requirements.

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