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The EMH11FHAT2R is a dual digital transistor from ROHM Semiconductor, featuring two NPN transistors with built-in bias resistors in an SOT-563 (EMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes a base resistor (R1) of 10 kΩ and an emitter-base resistor (R2) of 10 kΩ. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 5 mA and 5 V, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 150 mW. It is qualified to AEC-Q101 standards for automotive applications.
Verify the specific suffix T2R confirms the tape-and-reel packaging format containing 8000 units per standard factory reel. Confirm RoHS compliance status through official documentation before integration. Ensure the procurement channel provides traceability for AEC-Q101 certified components intended for automotive or industrial use.
Select this component when a dual NPN configuration with equal 10 kΩ biasing resistors is required. The 50 V voltage rating and 100 mA current capacity suit low-power switching and amplification tasks. Consider the 250 MHz transition frequency for applications requiring moderate-speed signal processing.
This part belongs to the EMH11 series of complex transistors designed for compact electronics. It serves as a pre-biased solution replacing discrete transistor and resistor networks. The SOT-563 form factor allows it to replace larger packages while maintaining similar electrical performance profiles for space-constrained designs.
Publicly confirmed substitute part numbers are not available in the provided source data. Designers should consult official ROHM documentation for direct pin-compatible alternatives within the same product family.