ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.15W EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250MHz
- Power - Max：150mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
Download product information
Overview
The EMH11T2R is a dual NPN digital transistor from ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It integrates two pre-biased transistors with typical input resistances of 10 kOhms and a ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 300 mV, continuous collector current of 100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hfe) of 30 at 5 mA/5 V and operates up to 250 MHz. It supports a maximum operating temperature of +150°C and includes a collector-emitter saturation voltage of 100 mV.
Feature Summary
- Integrates two NPN pre-biased transistors within a compact surface-mount package for space-efficient designs.
- Provides internal base biasing to simplify circuit design by reducing external component count.
- Offers high-frequency performance suitable for signal processing applications.
Applications
- Signal switching circuits
- Driver circuits for small loads
- Logic level translation
Procurement Notes
Verify the specific suffix 'T2R' corresponds to the required tape-and-reel packaging configuration. Confirm that the 300 mV VCEO rating aligns with the target application's voltage requirements, as this value is unusually low for standard switching applications. Ensure compatibility with the SOT-563 footprint during PCB layout.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. Consider the 100 mA current limit and 150 mW power dissipation constraints. Verify that the 10 kOhm input resistance matches the driving source impedance. Compare against similar ROHM series like EMG or EMF if different resistor ratios or polarities are needed.
Part Context
The EMH11T2R belongs to ROHM's EMH series of complex transistors. These devices combine NPN transistors with built-in bias resistors to replace multiple discrete components. The series is designed for high-density electronics, offering reliability and simplified assembly compared to traditional discrete transistor arrangements.
FAQ
What is the maximum operating frequency of the EMH11T2R?
The maximum operating frequency is 250 MHz.
What is the typical input resistance for this device?
The typical input resistance is 10 kOhms.
