EMH15T2R

EMH15T2R

$0.06
  • Description:TRANS 2NPN PREBIAS 0.15W 6EMT
  • Series:-

SKU:5767b04831c4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W 6EMT
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

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EMH15T2R

Overview

The EMH15T2R is a dual NPN pre-biased digital transistor array manufactured by ROHM Semiconductor. It features a surface-mount EMT6 (SOT-563) package with six terminals. Key electrical parameters include a collector-emitter breakdown voltage of 50V, a continuous collector current of 100mA, and a transition frequency of 250MHz. The device has a maximum power dissipation of 150mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates two NPN transistors with built-in biasing resistors in a compact SMD package
  • Optimized for high-speed switching applications with a 250MHz transition frequency
  • Designed for low-power consumption with a 150mW maximum power dissipation rating

Applications

  • General-purpose signal switching circuits
  • Logic interface and level shifting applications
  • High-frequency oscillator circuits

Procurement Notes

Verify the specific suffix 'T2R' corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the EMT6 package dimensions align with the target PCB footprint. Ensure the component status is reviewed as it may be marked as not recommended for new designs; validate availability against current production schedules before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration with integrated base resistors is required to reduce external component count. The 50V rating suits low-voltage logic systems. Consider the 150mW thermal limit for power dissipation calculations. The SOT-563 package offers space efficiency for dense layouts compared to discrete transistor solutions.

Part Context

This part belongs to the EMH15 series of complex transistors from ROHM. These devices combine bipolar junction transistors with internal resistors to simplify circuit design. The series is intended for use in consumer electronics and general industrial equipment where small form factors and reliable switching performance are prioritized over automotive-grade robustness.

Replacement Considerations

Direct substitutes include other dual NPN pre-biased transistors in the SOT-563 package with matching 50V and 100mA ratings. Verify pinout compatibility and thermal characteristics when evaluating alternatives.

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