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The EMH1FHAT2R is a dual digital transistor from ROHM Semiconductor, featuring two NPN transistors with built-in bias resistors in an SOT-563-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes typical input resistance values of 1 kΩ and 22 kΩ for its respective elements, with a power dissipation rating of 150 mW. Designed for automotive applications, it holds AEC-Q101 qualification and supports a maximum operating temperature of +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and check for any end-of-life notices prior to procurement decisions.
Select this component when a dual NPN configuration with integrated base resistors is required in a small outline package. Consider the 50 V voltage rating and 100 mA current capacity against circuit demands. Verify thermal management requirements given the 150 mW power dissipation limit in the SOT-563 form factor.
This part belongs to ROHM's series of complex digital transistors designed for space-constrained applications. It consolidates discrete transistor and resistor functions into a single surface-mount device, reducing board space and assembly complexity compared to using separate components.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official ROHM resources for equivalent parts within the same family or functional alternatives.