EMH1T2R

EMH1T2R

$0.45
  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-

SKU:c0407c9bbb6e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6

Download product information

EMH1T2R

Overview

The EMH1T2R is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-563-6 surface-mount package. It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 150 mW. The device features a typical input resistance of 1 kΩ and a maximum operating frequency of 250 MHz. It operates within a temperature range up to +150°C and offers a minimum DC current gain (hFE) of 80 at 10 mA.

Feature Summary

  • Integrates two independent NPN transistors with built-in bias resistors in a compact SOT-563-6 package.
  • Eliminates external resistor requirements for base drive circuits, reducing board space and assembly costs.
  • Provides high-speed switching capabilities with a maximum operating frequency of 250 MHz.
  • Features independent transistor elements to prevent interference between channels.

Applications

  • General-purpose small signal amplification circuits
  • High-frequency oscillator circuits
  • Digital logic interface and level shifting applications

Procurement Notes

Verify the specific suffix 'T2R' confirms the tape-and-reel packaging format required for automated surface-mount assembly. Confirm RoHS compliance status through the official datasheet or manufacturer certification documents prior to integration into environmentally regulated products. Ensure the ordering part number matches the exact electrical characteristics defined in the specification sheet.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Compare input resistance values against other series members if specific base drive currents are critical. Verify that the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage under all operating conditions. Consider the 150 mW power dissipation limit relative to the expected thermal environment and PCB copper area.

Part Context

The EMH1T2R belongs to the EMH1 series of complex transistors from ROHM Semiconductor. This series is designed for general-purpose applications requiring multiple transistor functions in a single package. The SOT-563-6 package is standardized across various ROHM discrete semiconductor products, facilitating consistent footprint design for multi-component solutions.

Replacement Considerations

The EMZ51T2R is listed as a similar specification replacement part. Verify pinout compatibility and electrical parameter alignment before substitution. No other direct substitutes are confirmed in the provided documentation.

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